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Cathodoluminescence emission study of nanocrystalline indium oxide films deposited by spray pyrolysis

Identifieur interne : 000271 ( Russie/Analysis ); précédent : 000270; suivant : 000272

Cathodoluminescence emission study of nanocrystalline indium oxide films deposited by spray pyrolysis

Auteurs : RBID : Pascal:07-0470467

Descripteurs français

English descriptors

Abstract

The results of analysis of In2O3 film cathodoluminescence (CL) spectra are presented in this paper. In2O3 films, aimed for gas sensor application, were deposited by spray pyrolysis from 0.2 M InCl3-water solutions. The influence of grain size (10-60 nm), film thickness (20-400 nm), pyrolysis temperature (Tpyr=400-520 °C), and annealing in the air or nitrogen atmospheres (Tan =600-1100 °C) on CL emission of In2O3 is discussed. CL spectra of as-deposited In2O3 films were characterized by a broad band centered at λ ∼ 570-600 nm. The annealing of studied films leads to a considerable increase of CL intensity. High annealing temperature of In2O3 films (Tan > 850 °C) is being accompanied by the appearance of additional bands centered at λ ∼ 400, 550, and 650 nm, which are peculiar to single-crystalline In2O3 nanobelts, or nanowires with perfect crystal structure. It was concluded that the improvement of crystal structure and the decrease of the concentration of oxygen vacancies are the main factors determining the change of CL spectra of In2O3 films and the appearance of edge luminescence.

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Pascal:07-0470467

Le document en format XML

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<title xml:lang="en" level="a">Cathodoluminescence emission study of nanocrystalline indium oxide films deposited by spray pyrolysis</title>
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<name sortKey="Korotcenkov, G" uniqKey="Korotcenkov G">G. Korotcenkov</name>
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<name sortKey="Lvanov, M" uniqKey="Lvanov M">M. Lvanov</name>
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<term>Controlled atmospheres</term>
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<term>Gas sensors</term>
<term>Grain size</term>
<term>Indium chlorides</term>
<term>Indium oxides</term>
<term>Luminescence</term>
<term>Monocrystals</term>
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<term>Nanowires</term>
<term>Optical properties</term>
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<term>Pyrolysis</term>
<term>Spray coatings</term>
<term>Tantalum nitrides</term>
<term>Thermal annealing</term>
<term>Thin films</term>
<term>Vacancies</term>
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<term>Cathodoluminescence</term>
<term>Nanostructure</term>
<term>Nanocristal</term>
<term>Couche mince</term>
<term>Dépôt projection</term>
<term>Capteur de gaz</term>
<term>Indium chlorure</term>
<term>Grosseur grain</term>
<term>Nanomatériau</term>
<term>Pyrolyse</term>
<term>Recuit thermique</term>
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<term>Indium oxyde</term>
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<div type="abstract" xml:lang="en">The results of analysis of In
<sub>2</sub>
O
<sub>3</sub>
film cathodoluminescence (CL) spectra are presented in this paper. In
<sub>2</sub>
O
<sub>3</sub>
films, aimed for gas sensor application, were deposited by spray pyrolysis from 0.2 M InCl
<sub>3</sub>
-water solutions. The influence of grain size (10-60 nm), film thickness (20-400 nm), pyrolysis temperature (T
<sub>pyr</sub>
=400-520 °C), and annealing in the air or nitrogen atmospheres (T
<sub>an</sub>
=600-1100 °C) on CL emission of In
<sub>2</sub>
O
<sub>3</sub>
is discussed. CL spectra of as-deposited In
<sub>2</sub>
O
<sub>3</sub>
films were characterized by a broad band centered at λ ∼ 570-600 nm. The annealing of studied films leads to a considerable increase of CL intensity. High annealing temperature of In
<sub>2</sub>
O
<sub>3</sub>
films (T
<sub>an</sub>
> 850 °C) is being accompanied by the appearance of additional bands centered at λ ∼ 400, 550, and 650 nm, which are peculiar to single-crystalline In
<sub>2</sub>
O
<sub>3</sub>
nanobelts, or nanowires with perfect crystal structure. It was concluded that the improvement of crystal structure and the decrease of the concentration of oxygen vacancies are the main factors determining the change of CL spectra of In
<sub>2</sub>
O
<sub>3</sub>
films and the appearance of edge luminescence.</div>
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<sub>2</sub>
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<sub>3</sub>
film cathodoluminescence (CL) spectra are presented in this paper. In
<sub>2</sub>
O
<sub>3</sub>
films, aimed for gas sensor application, were deposited by spray pyrolysis from 0.2 M InCl
<sub>3</sub>
-water solutions. The influence of grain size (10-60 nm), film thickness (20-400 nm), pyrolysis temperature (T
<sub>pyr</sub>
=400-520 °C), and annealing in the air or nitrogen atmospheres (T
<sub>an</sub>
=600-1100 °C) on CL emission of In
<sub>2</sub>
O
<sub>3</sub>
is discussed. CL spectra of as-deposited In
<sub>2</sub>
O
<sub>3</sub>
films were characterized by a broad band centered at λ ∼ 570-600 nm. The annealing of studied films leads to a considerable increase of CL intensity. High annealing temperature of In
<sub>2</sub>
O
<sub>3</sub>
films (T
<sub>an</sub>
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O
<sub>3</sub>
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